收藏本站
July 2000
FDD5680
N-Channel, PowerTrench ? MOSFET
General Description
Features
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for superior
switching performance.
Applications
?
?
?
?
38 A, 60 V. R DS(on) = 0.021 ? @ V GS = 10 V
R DS(on) = 0.025 ? @ V GS = 6 V.
Low gate charge (33nC typical).
Fast switching speed.
High performance trench technology for extremely
?
?
DC/DC converter
Motor drives
G
S
D
low R DS(on) .
G
D
T A =25 C unless otherwise noted
TO-252
Absolute Maximum Ratings
o
S
Symbol
V DSS
V GSS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Ratings
60
± 20
Units
V
V
I D
Maximun Drain Current - Continuous
(Note 1)
38
A
(Note 1a)
8.5
Maximum Drain Current
- Pulsed
100
P D
Maximum Power Dissipation @ T C = 25 o C
T A = 25 o C
T A = 25 o C
(Note 1)
(Note 1a)
(Note 1b)
60
2.8
1.3
W
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JC
R θ JA
Thermal Resistance, Junction-to- Case
Thermal Resistance, Junction-to- Ambient
(Note 1)
(Note 1b)
2.1
96
° C/W
° C/W
Package Marking and Ordering Information
Device Marking
FDD5680
Device
FDD5680
Reel Size
13’’
Tape width
16mm
Quantity
2500
? 2000 Fairchild Semiconductor International
FDD5680, Rev. C
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
FDD5690 MOSFET N-CH 60V 30A D-PAK
FDD5N50NZFTM MOSFET N-CH 500V DPAK
FDD5N50NZTM MOSFET N-CH 500V DPAK
FDD5N50TM_WS MOSFET N-CH 500V 4A DPAK
FDD5N50UTM_WS MOSFET N-CH 500V 3A DPAK
FDD5N53TM_WS MOSFET N-CH 530V 4A DPAK
FDD6030L MOSFET N-CH 30V 12A DPAK
FDD6530A MOSFET N-CH 20V 21A D-PAK
相关代理商/技术参数
FDD5690 功能描述:MOSFET 60V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD5690 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D-PAK
FDD5690_02 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:60V N-Channel PowerTrench㈢ MOSFET
FDD5755 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component
FDD5755C 制造商:ELMEC 功能描述: 制造商:ELMEC 功能描述:Electronic Component
FDD5810 功能描述:MOSFET LOW_VOLTAGE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDD5810_07 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench㈢ MOSFET
FDD5810_10 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Logic Level Trench?? MOSFET 60V, 36A, 27m"